Low voltage low current operation is possible in MOSFETS 11. Very small in size, occupies very small space in ICs 10. No minority carrier storage (Turn off is faster) 8. Low Voltage Low Current Operation is possible (Low-power consumption) 6. Source and drain are interchangeable in most Low-frequency applications 5. Voltage controlled Device (gate voltage controls drain current) 3. operation depends on only one type of charge carriers (h or e) (MAJORITY CHARGE CARRIERS) 2. Field-effect transistors are so named because a weak electrical signal coming in through one electrode creates an electrical field through the rest of the transistor.ĩ Few important advantages of FET over conventional Transistors 1. The term refers to the fact that current is transported by carriers of one polarity (majority), whereas in the conventional bipolar transistor carriers of both polarities (majority and minority) are involved. V GG voltage level controls current flow in the VDD, R D circuit.Ĩ The Field Effect Transistor (FET) The FET was known as a unipolar transistor. JFETs can be used as an amplifier just like the BJT. You will recall, the transistor uses current flow through the base-emitter junction to control current. The JFET uses voltage to control the current flow. Overall, the purpose of the FET is the same as that of the BJT.Ħ BJT vs JFET BipolarJunctionTransistor JunctionFieldEffectTransistor Current-based device I Base controls I CollectorEmitter Current-based device V Gate controls I SourceDrainħ The JFET Primary Characteristics Junction field effect transistor controls current flow. Its operation depends on the flow of majority charge carriers only (unipolar). It is simpler to fabricate and occupies less space than bipolar transistor 4. The FET s major advantage over the BJT is high input resistance (typically many megaohms). Field effect transistors control current by voltage applied to the gate. Temperature effects in MOSFETS Input Protection in MOSFET The Power FET (VMOS)ĥ Introduction 1. Active filters.3 Contents Junction FET Symbol Input/Output Characteristic Parameters JFET Biasing MethodsĤ Contents (Contd.) MOSFET Symbol Input/Output Characteristic Parameters MOSFET Biasing Methods Applications Switch, Digital Logic Gate and Amplifier. Inverting and non-inverting amplifiers and their analysis Summing, Scaling and Average amplifiers. Operational amplifiers ( Op amps): Op amp characteristics and specifications. Performance characteristic Class C- power amplifiers and their characteristics MOSFET power amplifiers.ĭifferential and Operational Amplifiers :ĭifferential amplifiers: Inverting and non-inverting inputs. Power efficiency etc.: Class B push-pull amplifiers. Power Amplifiers : Classification of power amplifiers. MOSFET as a register, MOS Capacitor, CMOS Circuits. Common Drain, Common source and common gate amplifiers. Changes in input, output impedance levels, band width etc.: Frequency Response, Coupling Methods, Multistage amplifiers.įield Effect Transistors (FETs) : Junction field effect transistor (JFET), MOSFETs : Depletion MOSFET, Enhancement MOSFET Biasing of MOSFETs. Desired modifications in amplifier circuits using negative feedback. Expressions for amplifier performance parameters in terms of h-parameters r-parameters: Expressions for amplifier performance parameters in terms of r-parameters.įeedback and Frequency Response in Amplifiers : Negative and Positive feedbacks. Small Signal BJT Amplifiers : h- parameters: Hybrid model for transistor amplifiers. Various biasing Schemes/circuits and Analysis. Common Base, Common Emitter, Common Collector Configurations, I-V Characteristics Bias and Bias Stability. Transistor with external bias, Transistor Action. Transistor (BJT) : Transistor in equilibrium (no external bias). Currents in forward and reverse biased junction. Junction properties: contact potential, junction capacitance.
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